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| NTE2970 MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: D SMPS D DC-DC Converter D Battery Charger D Power Supply of Printer D Copier D HDD, FDD, TV, VCR D Personal Computer Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Drain-Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Gate-Source Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66A Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275W Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Channel-to-Case, Rth(ch-c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45C/W Electrical Characteristics: (Tch = +25C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate-Source Breakdown Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source ON Resistance Drain-Source On-State Voltage Forward Transfer Admittance Symbol Test Conditions Min 500 30 - - 2.0 - - 7 Typ - - - - 3.0 0.22 2.4 10 Max - - 10 1.0 4.0 0.29 3.2 - Unit V V A mA V V S V(BR)DSS VDS = 0V, ID = 1mA V(BR)GSS VDS = 0V, IG = 100A IGSS IDSS VGS(th) RDS(on) VDS(on) |yfs| VGS = 25V, VDS = 0V VDS = 500V, VGS = 0 VDS = 10V, ID = 1mA VGS = 10V, ID = 11A VGS = 10V, ID = 11A VGS = 10V, ID = 11A Electrical Characteristics (Cont'd): (Tch = +25C unless otherwise specified) Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf VSD IS = 11A, VGS = 0V VDD = 200V, ID = 11A, VGS = 10V, RGEN = RGS = 50 Test Conditions VGS = 0V, VDS = 25V, f = 1MHz Min - - - - - - - - Typ 2800 350 55 60 80 270 80 1.5 Max - - - - - - - 2.0 Unit pF pF pF ns ns ns ns V .190 (4.82) .615 (15.62) .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) G D S .215 (5.47) |
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